Silicon Growth:

Silicon growth gases, also known as “silicon precursors,” are used to deposit silicon layers on existing substrates. These layers form when precursor gases react with heat or basic gases (such as hydrogen). Common silicon precursors include silane, silicon tetrachloride, and silicon tetrafluoride. These gases contribute to the growth of silicon layers in integrated circuits (ICs) and other semiconductor devices.

Dopants:

Dopants are impurities intentionally added to semiconductors to modify their electrical properties. By introducing specific dopant atoms—such as phosphorus, boron, or arsenic—into a semiconductor like silicon, manufacturers control the material’s conductivity. This process, called doping, creates either n-type (extra electrons) or p-type (electron holes) semiconductors, which are essential for making electronic components like transistors and diodes function properly.