
Silicon Growth:
Silicon growth gases, also known as “silicon precursors,” are used to deposit silicon layers on existing substrates. These layers form when precursor gases react with heat or basic gases (such as hydrogen). Common silicon precursors include silane, silicon tetrachloride, and silicon tetrafluoride. These gases contribute to the growth of silicon layers in integrated circuits (ICs) and other semiconductor devices.
Dopants:
Silicon growth gases, also known as “silicon precursors,” are used to deposit silicon layers on existing substrates. These layers form when precursor gases react with heat or basic gases (such as hydrogen). Common silicon precursors include silane, silicon tetrachloride, and silicon tetrafluoride. These gases contribute to the growth of silicon layers in integrated circuits (ICs) and other semiconductor devices.